Rotationally Commensurate Growth of MoS2 on Epitaxial Graphene

Liu, Xiaolong; Balla, Itamar; Bergeron, Hadallia; Campbell, Gavin J.; Bedzyk, Michael J.; Hersam, Mark C.

silicon carbide graphene synchrotron X-ray scattering MoS2 chemical vapor deposition experiment 2D materials molybdenum disulfide CVD scanning tunneling microscopy SiC van der Waals heterostructure electronic materials

Organizations

CHiMaD

Year

2016

Source Name

pub_101_liu_rotationally

DOI

10.18126/M2G59Q View on Datacite

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This data demonstrates the rotationally commensurate growth of atomically thin MoS2 on epitaxial graphene (EG) on silicon carbide using chemical vapor deposition. The characterization of the MoS2/EG heterostructure is performed using atomic force microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, synchrotron X-ray scattering, atomic-resolution scanning tunneling microscopy (STM), and scanning tunneling spectroscopy. DOI: 10.1021/acsnano.5b06398