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In Situ Transport Measurements Reveal Source of Mobility Enhancement of MoS2 and MoTe2 during Dielectric Deposition
Shang, Ju Ying; Moody, Michael J.; Chen, Jiazhen; Krylyuk, Sergiy; Davydov, Albert V.; Marks, Tobin J.; Lauhon, Lincoln J.
semiconductors
2D materials
experiment
atomic layer deposition
ALD
transition metal dichalcogenide
Organizations
Lauhon Group
Year
2020
Source Name
shang_situ_transport_deposition
Contacts
Zhehao Zhu (ZhehaoZhu2022@u.northwestern.edu)
DOI
10.18126/ypnx-y3of
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